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  this is information on a product in full production. october 2012 doc id 018922 rev 1 1/8 8 stth810-y automotive ultrafast recove ry - high voltage diode datasheet ? production data features aec-q101 qualified ultrafast, so ft recovery very low conduction and switching losses high frequency and/or high pulsed current operation high reverse voltage capability high junction temperature description the high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. these characteristics make it ideal for heavy duty applications that demand long term reliability like automotive applications. these diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications. the improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device. table 1. device summary i f(av) 8 a v rrm 1000 v t j 175 c v f (typ) 1.30 v t rr (typ) 47 ns k k nc a a d 2 pa k stth810gy www.st.com
characteristics stth810-y 2/8 doc id 018922 rev 1 1 characteristics to evaluate the conduction losses use the following equation: p = 1.3 x i f(av) + 0.05 i f 2 (rms) table 2. absolute ratings (limiting values at 25 c, unless otherwise specified) symbol parameter value unit v rrm repetitive peak reverse voltage 1000 v i f(rms) forward rms current 30 a i f(av) average forward current, ? = 0.5 t c = 130 c 8 a i frm repetitive peak forward current t p = 5 s, f = 5 khz square 100 a i fsm surge non repetitive forward current t p = 10 ms sinusoidal 60 a t stg storage temperature range -65 to + 175 c t j operating junction temperature range -40 to +175 c table 3. thermal parameters symbol parameter value unit r th(j-c) junction to case 2.5 c/w table 4. static electrical characteristics symbol parameter test conditions min. typ. max. unit i r (1) reverse leakage current t j = 25 c v r = v rrm 5 a t j = 125 c 2 20 v f (2) forward voltage drop t j = 25 c i f = 8 a 2 v t j = 100 c 1.4 1.8 t j = 150 c 1.3 1.7 1. pulse test: t p = 5 ms, ? < 2% 2. pulse test: t p = 380 s, ? < 2%
stth810-y characteristics doc id 018922 rev 1 3/8 table 5. dynamic characteristics symbol parameter test conditions min. typ. max. unit t rr reverse recovery time i f = 1 a, di f /dt = -50 a/s, v r = 30 v, t j = 25 c 64 85 ns i f = 1 a, di f /dt = -100 a/s, v r = 30 v, t j = 25 c 47 65 i rm reverse recovery current i f = 8 a, di f /dt = -200 a/s, v r = 600 v, t j = 125 c 12 16 a s softness factor i f = 8 a, di f /dt = -200 a/s, v r = 600 v, t j = 125 c 2 t fr forward recovery time i f = 8 a di f /dt = 50 a/s v fr = 1.5 x v fmax , t j = 25 c 300 ns v fp forward recovery voltage i f = 8 a, di f /dt = 50 a/s, t j = 25 c 5.5 v figure 1. conduction losses versus average current figure 2. forward voltage drop versus forward current p(w) 0 2 4 6 8 10 12 14 16 18 012345678910 =0.05 =0.1 =0.2 =0.5 =1 t i (a) f(av) i (a) fm 0 10 20 30 40 50 60 70 80 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 t j =25c (maximum values) t j =150c (maximum values) t j =150c (typical values) v (v) fm figure 3. relative variation of thermal impedance junction to case versus pulse duration figure 4. peak reverse recovery current versus di f /dt (typical values) z/r th(j-c) th(j-c) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-03 1.e-02 1.e-01 1.e+00 single pulse t (s) p i (a) rm 0 5 10 15 20 25 0 50 100 150 200 250 300 350 400 450 500 v r =600v t j =125c i f = 2 x i f(av) i f = i f(av) i f =0.5 x i f(av) di /dt(a/s) f
characteristics stth810-y 4/8 doc id 018922 rev 1 figure 5. reverse recovery time versus di f /dt (typical values) figure 6. reverse recovery charges versus di f /dt (typical values) t (ns) rr 0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500 v r =600v t j =125c i f =0.5 x i f(av) i f = 2 x i f(av) i f =i f(av ) di /dt(a/s) f q (c) rr 0.0 0.5 1.0 1.5 2.0 2.5 0 50 100 150 200 250 300 350 400 450 500 i f =0.5 x i f(av) i f = i f(av) i f = 2 x i f(av) v r =600v t j =125c di /dt(a/s) f figure 7. softness factor versus di f /dt (typical values) figure 8. relative variations of dynamic parameters versus junction temperature s factor 1.0 1.5 2.0 2.5 3.0 0 50 100 150 200 250 300 350 400 450 500 i f = 2 x i f(av) v r =600v t j =125c di /dt(a/s) f 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 25 50 75 100 125 i rm q rr s factor i f = i f(av) v r =600v reference: t j =125c t rr t (c) j figure 9. transient peak forward voltage versus di f /dt (typical values) figure 10. forward recovery time versus di f /dt (typical values) v (v) fp 0 5 10 15 20 25 30 35 40 45 0 100 200 300 400 500 i f = i f(av) t j =125c di /dt(a/s) f t (ns) fr 200 250 300 350 400 450 500 550 600 0 100 200 300 400 500 i f = i f(av) v fr = 1.5 x v f max. t j =125c di /dt(a/s) f
stth810-y characteristics doc id 018922 rev 1 5/8 figure 11. junction capacitance versus reverse voltage applied (typical values) figure 12. thermal resistance junction to ambient versus copper surface under tab c(pf) 1 10 100 1 10 100 1000 f=1mhz v osc =30mv rms t j =25c v (v) r r (c/w) th(j-a) 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 40 d2pak s (cm2) cu epoxy printed circuit board fr4, copper thickness = 35 m
package information stth810-y 6/8 doc id 018922 rev 1 2 package information epoxy meets ul94, v0 cooling method: by conduction (c) in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. figure 13. d 2 pak footprint (dimensions in mm) table 6. d 2 pak dimensions ref. dimensions millimeters inches min. max. min. max. a 4.40 4.60 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.70 0.93 0.027 0.037 b2 1.14 1.70 0.045 0.067 c 0.45 0.60 0.017 0.024 c2 1.23 1.36 0.048 0.054 d 8.95 9.35 0.352 0.368 e 10.00 10.40 0.393 0.409 g 4.88 5.28 0.192 0.208 l 15.00 15.85 0.590 0.624 l2 1.27 1.40 0.050 0.055 l3 1.40 1.75 0.055 0.069 m 2.40 3.20 0.094 0.126 r 0.40 typ. 0.016 typ. v2 0 8 0 8 g l l3 l2 b b2 e * flat zone no less than 2mm a c2 d r a2 m v2 c a1 * 16.90 10.30 8.90 3.70 5.08 1.30
stth810-y ordering information doc id 018922 rev 1 7/8 3 ordering information 4 revision history table 7. ordering information order code marking package weight base qty delivery mode STTH810GY-TR stth810gy d 2 pak 1.48 g 1000 tape & reel table 8. document revision history date revision changes 24-oct-2012 1 first issue.
stth810-y 8/8 doc id 018922 rev 1 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2012 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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